SIGC81T120R2C edited by infineon technologies ai ps dd hv3, l 7161 - m , edition 2 , 03.09.2003 igbt chip in npt - technology this chip is used for: power module bsm 50gd120dn2 features: 1200v npt technology 200m chip low turn - off losses positive temperature coefficient easy paralleling integrated gate resistor applications: drives g c e chip typ e v ce i cn die size package ordering code SIGC81T120R2C 1200v 50a 9.08 x 8.98 mm 2 sawn on foil q67041 - a4701 - a003 mechanical parameter: raster size 9.08 x 8.98 emitter pad size 8 x ( 2.6 x 1.78 ) gate pad size 1.46 x 0.8 area total / active 81 .5 / 63.5 mm 2 thickness 200 m wafer size 150 mm flat position 90 grd max.possible chips per wafer 167 pcs passivation frontside photoimide emitter metallization 3200 nm al si 1% collector metallization 1400 nm ni ag ? system suitable for epoxy and so ft solder die bonding die bond electrically conductive glue or solder wire bond al, <500m reject ink dot size ? 0.65mm ; max 1.2mm recommended storage environment store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23 c
SIGC81T120R2C edited by infineon technologies ai ps dd hv3, l 7161 - m , edition 2 , 03.09.2003 maximum ratings: parameter symbol value unit collector - emitter voltage , t j =25 c v ce 1200 v dc collector current, limited by t jmax i c 1 ) a pulsed collector current, t p limited by t jmax i cpuls 150 a gate emitter voltage v ge 20 v operating junction and storage temperature t j , t stg - 55 ... +150 c 1 ) depending on thermal properties of assembly static characteristics (tested on chip) , t j =25 c, unless otherwise specified: v alue parameter symbol conditions min. typ. max. unit collector - emitter breakdown voltage v (br)ces v ge =0v , i c =3ma 1200 collector - emitter saturation voltage v ce(sat) v ge =15v, i c =50a 2.0 2.5 3.0 gate - emitter threshold voltage v ge(th) i c =2ma , v ge =v ce 4.5 5.5 6.5 v zero gat e voltage collector current i ces v ce =1200v , v ge =0v 300 a gate - emitter leakage current i ges v ce =0v , v ge =2 0v 300 na integrated gate resistor r gint 5 w electrical characteristics (tested at component): value parameter symbol conditions min. typ. max. unit input capacitance c iss - 3300 - output capacitance c oss - 500 - reverse transfer capacitance c rss v ce =25v, v ge =0v, f =1mhz - 220 - pf switching characteristics (tested at component), inductive load value parameter symbol conditions 1) min. typ. max. unit turn - on delay time t d(on) - 44 100 rise time t r - 56 100 turn - off delay time t d(off) - 380 500 fall time t f t j =125 c v cc =600v, i c =50a, v ge =+15/ - 15v, r g = 22 w - 70 100 ns 1) values also influenced by parasitic l - an d c - in measurement and package.
SIGC81T120R2C edited by infineon technologies ai ps dd hv3, l 7161 - m , edition 2 , 03.09.2003 chip drawing:
SIGC81T120R2C edited by infineon technologies ai ps dd hv3, l 7161 - m , edition 2 , 03.09.2003 further electrical characteristics: this chip data sheet refers to the device data sheet bsm 50gd120dn2 econopack 2k description: aql 0,65 for visual inspection according to failure catalog elect rostatic discharge sensitive device according to mil - std 883 test - normen villach/prffeld published by infineon technologies ag , bereich kommunikation st. - martin - strasse 53, d - 81541 mnchen ? infineon technologies ag 2002 all rights reserved. atten tion please! the information herein is given to describe certain components and shall not be considered as warranted characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not li mited to warranties of non - infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office in germany or our infineon technologies representatives world - wide (see address list). warnings due to technical requirements components may contain dangerous substances. for information on the types in que stion please contact your nearest infineon technologies office. infineon technologies components may only be used in life - support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life - support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and / or maintain a nd sustain and / or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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